The out-of-plane reorientation also induces changes in the polarisation state of the light beam and the competition between two different out-of-plane reorientation directions may lead to slow switching. Due to the out-of-plane reorientation of the director at one side of the pixel, binary gratings show strongly asymmetric diffraction in the pretilt plane. The twist effect is asymmetric and only occurs at the edges where the fringe-field of the high voltage pixel is inclined in the same direction as the pretilt. By twisting out of the pretilt plane, the formation of a reverse tilt zone in the LC director configuration is avoided. By comparing experimental microscopy measurements with simulations, we demonstrate that the director can rotate out of the plane determined by the pretilt of the SLM. In this work we study the LC director configuration in vertically aligned nematic (VAN) SLMs, with a focus on 1D binary gratings with different driving voltages. The proposed model can improve the precision for digital and RF circuit simulation in sub-nanometer technology generation.Liquid crystal (LC)-based spatial light modulators (SLMs) have the ability to shape the wavefront of a light beam and are widely used in applications where phase or amplitude modulation is required. The proposed model is validated on 40 nm MOSFETs, with a series of layout parameters, and good agreement is obtained between the modeled and measured data over a large range of CPS and CCS. The effects of gate to contact space (CPS), contact to contact space (CCS) and the process variations, such as the over-etching of source/drain contact, are taken into account. Based on the device structure, C f is divided and analytically modeled by three dual- k perpendicular-plate capacitances. A significant layout-dependent-effect is found in C f for the case with high contact density. A kind of field-poly structure on shallow trench isolation (STI) is used to separate C f from other gate-around parasitic capacitances. In this paper, we present an analytical closed model for the gate to source/drain fringing capacitance ( C f) of nanoscale metal oxide semiconductor field effect transistors (MOSFETs), with the consideration of layout dependent effects and process fluctuations.
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